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Advance Product Information
September19, 2005
DC - 20 GHz Discrete power pHEMT
* * * * * * * *
TGF2022-12
Key Features and Performance
Frequency Range: DC - 20 GHz > 31 dBm Nominal Psat 58% Maximum PAE 39 dBm Nominal OIP3 13 dB Nominal Power Gain Suitable for high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 300mA) Chip Dimensions: 0.57 x 0.79 x 0.10 mm (0.022 x 0.031 x 0.004 in)
Product Description
The TriQuint TGF2022-12 is a discrete 1.2 mm pHEMT which operates from DC-20 GHz. The TGF2022-12 is designed using TriQuint's proven standard 0.35um power pHEMT production process. The TGF2022-12 typically provides > 31 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-12 appropriate for high efficiency applications. The TGF2022-12 is also ideally suited for Point-to-point Radio, High-reliability space, and Military applications. The TGF2022-12 has a protective surface passivation layer providing environmental robustness.
Lead-free and RoHS compliant
*
Primary Applications
* * * * *
35 30
Point-to-point Radio High-reliability space Military Base Stations Broadband Wireless Applications
Maximum Gain (dB)
25 MSG 20 15 10 5 0 0 2 4 6 8 10 12 14 16 MAG
Frequency (GHz)
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September19, 2005
TABLE I MAXIMUM RATINGS Symbol
V+ V I
+
TGF2022-12
Value
12.5 V -5V to 0V 564 mA 14 mA 26 dBm See note 3 150 C 320 C -65 to 150 C 2/ 2/ 3/ 4/ 2/
Parameter 1/
Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Gate Supply Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature
Notes
2/
| IG | PIN PD TCH TM TSTG 1/ 2/ 3/
These ratings represent the maximum operable values for this device. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 C - TBASE C) / 69.0 (C/W) Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
4/
TABLE II DC PROBE CHARACTERISTICS (TA = 25 qC, Nominal)
Symbol Idss Gm VP VBGS VBGD Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Minimum -1.5 -30 -30 Typical 360 450 -1 Maximum -0.5 -14 -14 Unit mA mS V V V
Note: For TriQuint's 0.35um power pHEMT devices, RF breakdown >> DC breakdown
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September19, 2005
TABLE III RF CHARACTERIZATION TABLE 1/
(TA = 25 C, Nominal) f = 10 GHz
Vd = 10V Idq = 90 mA Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient 31.9 52.4 12.9 22.34 0.552 0.580 153.7 Vd = 12V Idq = 90 mA 32.6 51.9 12.9 28.49 0.515 0.559 145.4
TGF2022-12
f = 18 GHz UNITS
SYMBOL
Power Tuned:
PARAMETER
Vd = 10V Idq = 90 mA 31.1 41.5 8.3 21.77 0.461 0.693 154.8
Vd = 12V Idq = 90 mA 31.7 37.0 8.0 24.22 0.481 0.713 153.0 dBm % dB pF -
Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ Efficiency Tuned: Psat PAE Gain Rp 2/ Cp 2/ L 3/, 4/ OIP3
Saturated Output Power Power Added Efficiency Power Gain Parallel Resistance Parallel Capacitance Load Reflection coefficient Output TOI
31.3 58.3 13 36.24 0.503 0.569 137.1 40
32.3 56.0 13 37.11 0.510 0.577 136.6 39
30.5 46.0 8.5 25.65 0.550 0.759 153.5 40
31.1 42.5 8.3 33.49 0.559 0.795 150.6 39
dBm % dB pF dBm
1/ Values in this table are from measurements taken from a 0.6mm unit pHEMT cell at 10 and 18 GHz 2/ Large signal equivalent pHEMT output network 3/ Optimum load impedance for maximum power or maximum PAE at 10 and 18 GHz 4 The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp. The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV THERMAL INFORMATION Parameter JC Thermal Resistance Test Conditions TCH (oC)
145
TJC (qC/W)
69
TM (HRS)
1.6 E+6
Vd = 12 V (channel to backside of carrier) Idq = 90 mA Pdiss = 1.08 W
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September19, 2005
Linear Model for 0.6 mm Unit pHEMT cell
Rdg Lg Gate Cgs Rgs Ri + Rds gm vi Cds Rg Cdg Rd Ld Drain
TGF2022-12
vi
-
Ls
Rp, Cp
8QLW S+(07 FHOO 5HIHUHQFH 3ODQH
Rs
Source Gate Drain
UPC
Source Source
Source
UPC = 0.6mm Unit pHEMT Cell
MODEL PARAMETER
Rg Rs Rd gm Cgs Ri Cds Rds Cgd Tau Ls Lg Ld Rgs Rgd
Vd = 8V Idq = 45mA
0.22 0.40 0.51 0.195 1.50 1.65 0.115 243.14 0.072 5.94 0.001 0.108 0.121 5110 57700
Vd = 8V Idq = 60mA
0.23 0.41 0.52 0.202 1.63 1.59 0.115 247.08 0.066 6.23 0.001 0.108 0.120 5140 64800
Vd = 8V Idq = 75mA
0.24 0.41 0.52 0.202 1.70 1.58 0.116 255.12 0.063 6.51 0.001 0.108 0.118 8310 74400
Vd = 10V Idq = 45mA
0.23 0.46 0.50 0.188 1.64 1.72 0.114 278.72 0.064 6.85 0.001 0.108 0.118 5110 79400
Vd = 10V Idq = 60mA
0.24 0.45 0.50 0.195 1.73 1.64 0.115 279.31 0.061 6.95 0.001 0.108 0.118 5420 82900
Vd = 12V Idq = 45mA
0.24 0.50 0.48 0.183 1.71 1.73 0.114 302.49 0.060 7.36 0.001 0.108 0.117 5120 82300
UNITS
S pF pF pF pS nH nH nH
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September19, 2005
TGF2022-12
Linear Model for 1.2mm pHEMT
L - via = 0.0135 nH (3x)
2 UPC
3
Gate Pads (2x)
Drain Pads (2x)
1 UPC
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September19, 2005
Unmatched S-parameters for 1.2 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 90mA
TGF2022-12
Frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (GHz) dB deg dB deg dB deg dB deg 0.5 -0.449 -74.97 25.960 139.64 -32.579 51.44 -7.225 -40.59 1 -0.566 -114.01 22.665 117.83 -29.857 31.56 -9.792 -62.45 1.5 -0.616 -133.49 19.905 105.89 -29.100 21.51 -11.461 -74.20 2 -0.638 -144.62 17.702 98.10 -28.810 15.62 -12.337 -81.55 2.5 -0.648 -151.74 15.902 92.30 -28.680 11.71 -12.687 -86.71 3 -0.654 -156.68 14.390 87.57 -28.620 8.88 -12.706 -90.67 3.5 -0.657 -160.33 13.087 83.49 -28.595 6.69 -12.526 -93.91 4 -0.658 -163.15 11.945 79.82 -28.592 4.91 -12.225 -96.68 4.5 -0.658 -165.41 10.926 76.44 -28.603 3.43 -11.858 -99.15 5 -0.658 -167.26 10.008 73.26 -28.624 2.15 -11.454 -101.40 5.5 -0.657 -168.83 9.170 70.24 -28.652 1.03 -11.036 -103.51 6 -0.655 -170.17 8.400 67.34 -28.687 0.03 -10.615 -105.49 6.5 -0.654 -171.35 7.687 64.53 -28.728 -0.87 -10.200 -107.39 7 -0.652 -172.39 7.022 61.80 -28.773 -1.69 -9.795 -109.22 7.5 -0.650 -173.32 6.398 59.14 -28.822 -2.44 -9.403 -110.99 8 -0.647 -174.17 5.811 56.53 -28.875 -3.13 -9.025 -112.72 8.5 -0.645 -174.94 5.256 53.97 -28.931 -3.76 -8.663 -114.40 9 -0.642 -175.66 4.729 51.46 -28.991 -4.35 -8.316 -116.05 9.5 -0.639 -176.32 4.227 48.99 -29.053 -4.89 -7.985 -117.66 10 -0.636 -176.94 3.747 46.56 -29.118 -5.38 -7.669 -119.25 10.5 -0.633 -177.53 3.288 44.16 -29.185 -5.84 -7.367 -120.81 11 -0.630 -178.08 2.847 41.79 -29.255 -6.26 -7.079 -122.34 11.5 -0.627 -178.61 2.423 39.45 -29.326 -6.65 -6.805 -123.84 12 -0.624 -179.11 2.014 37.14 -29.400 -7.00 -6.543 -125.33 12.5 -0.621 -179.60 1.619 34.86 -29.475 -7.31 -6.293 -126.79 13 -0.618 179.94 1.237 32.61 -29.551 -7.59 -6.055 -128.23 13.5 -0.614 179.49 0.867 30.38 -29.628 -7.85 -5.828 -129.65 14 -0.611 179.05 0.508 28.17 -29.707 -8.06 -5.611 -131.04 14.5 -0.608 178.63 0.160 25.99 -29.786 -8.25 -5.404 -132.42 15 -0.604 178.22 -0.180 23.83 -29.866 -8.41 -5.206 -133.78 15.5 -0.601 177.82 -0.510 21.70 -29.947 -8.54 -5.017 -135.12 16 -0.598 177.43 -0.831 19.59 -30.028 -8.64 -4.836 -136.44 16.5 -0.594 177.05 -1.145 17.49 -30.108 -8.71 -4.663 -137.75 17 -0.591 176.68 -1.452 15.42 -30.189 -8.75 -4.497 -139.03 17.5 -0.588 176.31 -1.751 13.37 -30.270 -8.76 -4.339 -140.30 18 -0.584 175.95 -2.044 11.34 -30.350 -8.75 -4.187 -141.55 18.5 -0.581 175.60 -2.330 9.33 -30.430 -8.71 -4.041 -142.79 19 -0.578 175.25 -2.611 7.33 -30.509 -8.65 -3.901 -144.01 19.5 -0.575 174.90 -2.886 5.36 -30.588 -8.56 -3.768 -145.21 20 -0.572 174.56 -3.156 3.40 -30.665 -8.44 -3.639 -146.40 20.5 -0.569 174.23 -3.421 1.46 -30.741 -8.30 -3.516 -147.57 21 -0.566 173.90 -3.681 -0.47 -30.816 -8.14 -3.397 -148.72 21.5 -0.563 173.57 -3.936 -2.38 -30.889 -7.95 -3.283 -149.87 22 -0.560 173.24 -4.187 -4.27 -30.961 -7.75 -3.174 -150.99 22.5 -0.557 172.92 -4.434 -6.15 -31.031 -7.52 -3.068 -152.11 23 -0.554 172.60 -4.677 -8.01 -31.099 -7.26 -2.967 -153.21 23.5 -0.551 172.29 -4.917 -9.86 -31.166 -6.99 -2.869 -154.30 24 -0.548 171.98 -5.153 -11.70 -31.230 -6.70 -2.775 -155.37 24.5 -0.545 171.67 -5.385 -13.52 -31.292 -6.40 -2.685 -156.43 25 -0.542 171.36 -5.614 -15.33 -31.352 -6.07 -2.597 -157.48 25.5 -0.540 171.05 -5.841 -17.12 -31.410 -5.73 -2.513 -158.51 26 -0.537 170.75 -6.064 -18.91 -31.465 -5.37 -2.432 -159.54
Note: The s-parameters are calculated by connecting nodes 1-2 together, and nodes 3-4 together to form a 2-port network.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September19, 2005
TGF2022-12 Mechanical Drawing
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GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Advance Product Information
September19, 2005
TGF2022-12
Assembly Process Notes
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C for 30 sec An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200 C.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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